Adsorption-controlled growth of BiMnO3 thin films by molecular-beam epitaxy

Lee, J.H.; Ke, X.; Mei, Z.G.; Ihlefeld, J.F.; Schiffer, P.; Heeg, T.; Schubert, J.; Schlom, D.G.; Liu, Z.K.; Misra, R.; Xu, X.S.; Roeckerath, M.; Musfeldt, J.L.

doi:10.1063/1.3457786

Journal Article

Adsorption-controlled growth of BiMnO3 thin films by molecular-beam epitaxy

Lee, J. H. ; Ke, X. ; Misra, R. ; Ihlefeld, J. F. ; Xu, X. S. ; Mei, Z. G. ; Heeg, T. ; Roeckerath, M.FZJ* ; Schubert, J.FZJ* ; Liu, Z. K. ; Musfeldt, J. L. ; Schiffer, P. ; Schlom, D. G.

2010
American Institute of Physics Melville, NY

Applied physics letters 96, 262905 (2010) [10.1063/1.3457786]

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Please use a persistent id in citations: http://hdl.handle.net/2128/18091 doi:10.1063/1.3457786

Abstract: We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with omega rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 degrees). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1 +/- 0.1 eV. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457786]

Keyword(s): J ; absorption coefficients (auto) ; bismuth compounds (auto) ; energy gap (auto) ; magnetic epitaxial layers (auto) ; molecular beam epitaxial growth (auto) ; multiferroics (auto) ; X-ray diffraction (auto)

Classification:

Physics, Applied

Note: We gratefully acknowledge the financial support from the National Science Foundation through Grant No. DMR-0507146 and the MRSEC program (Grant No. DMR-0820404 ) and from the U.S. DOE through Grant No. DE-FG02-01-ER45885 (UT)

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