Journal Article

FZJ-2021-05141

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes

Talamas Simola, E. (Corresponding author) ; Kiyek, V.FZJ* ; Ballabio, A. ; Schlykow, V.FZJ* ; Frigerio, J. ; Zucchetti, C. ; De Iacovo, A. ; Colace, L. ; Yamamoto, Y. ; Capellini, G. ; Grützmacher, D.FZJ* ; Buca, D. (Corresponding author)FZJ* ; Isella, G.

2021
ACS Washington, DC

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Please use a persistent id in citations: http://hdl.handle.net/2128/29493  doi:10.1021/acsphotonics.1c00617

Abstract: Infrared (IR) multispectral detection is attractingincreasing interest with the rising demand for high spectralsensitivity, room temperature operation, CMOS-compatible devices.Here, we present a two-terminal dual-band detector, which providesa bias-switchable spectral response in two distinct IR bands. Thedevice is obtained from a vertical GeSn/Ge/Si stack, forming adouble junction n-i-p-i-n structure, epitaxially grown on a Si wafer.The photoresponse can be switched by inverting the bias polaritybetween the near and the short-wave IR bands, with specificdetectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively.The possibility of detecting two spectral bands with the same pixelopens up interesting applications in the field of IR imaging andmaterial recognition, as shown in a solvent detection test. Thecontinuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis,demonstrated by identifying the wavelength of a monochromatic beam.

Keyword(s): Information and Communication (1st) ; Materials Science (2nd)

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)
2. Verbundprojekt: Nanostrukturierte GeSn Beschichtungen für die Photonik (GESNAPHOTO) - Teilvorhaben: Entwicklung neuartiger Detektoren und Emitter basierend auf GeSn Schichtstrukturen (13N14159) (13N14159)
3. Verbundprojekt: Erforschung nanoelektronischer Höchstleistungs-Bauelemente für innovative Elektronik auf Basis neuer Materialsysteme - ForMikro-SiGeSn-NanoFETs - , Teilvorhaben: CVD-basierte Herstellung von SiGeSn-Halbleiterheterostrukturen und vertikalen (16ES1074) (16ES1074)

Appears in the scientific report 2021

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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