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NANOSIL

Silicon-based nanostructures and nanodevices for long term nanoelectronics applications

CoordinatorUNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK ; Université Catholique de Louvain ; National Centre of Scientific Research Demokritos ; École Polytechnique Fédérale de Lausanne ; QIMONDA DRESDEN GMBH & CO.OHG ; STMicroelectronics (Switzerland) - STMicroelectronics (France) ; INPG ENTREPRISE SA ; UNIVERSITY OF NEWCASTLE UPON TYNE ; Chalmers University of Technology - Wallenberg Wood Science Center ; Forschungszentrum Jülich ; Atomic Energy and Alternative Energies Commission ; UGA - Grenoble Institute of Technology ; RWTH Aachen University ; GESELLSCHAFT FUR ANGEWANDTE MIKRO UND OPTOELEKTRONIK MIT BESCHRANKTERHAFTUNG AMO GMBH ; Royal Institute of Technology ; Swiss Federal Institute of Technology in Zurich ; University of Stuttgart ; Consorzio Nazionale Interuniversitario Per La Nanoelettronica ; Warsaw University of Technology ; University of Liverpool ; Rovira i Virgili University ; Synopsys (Switzerland) ; Braunschweig University of Technology ; University of Glasgow ; INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM ; Paris 8 University ; University of Warwick ; Institut Supérieur de l'Électronique et du Numérique ; INSTITUT SINANO ASSOCIATION
Grant period2008-01-01 - 2011-03-31
Funding bodyEuropean Union
Call numberFP7-ICT-2007-1
Grant number216171
IdentifierG:(EU-Grant)216171

     

Recent Publications

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Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacs by C+ Pre-Implantation
Electrochemical and solid-state letters 14, H261-H263 () [10.1149/1.3578387] BibTeX | EndNote: XML, Text | RIS

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Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process
IEEE Transactions on Electron Devices 58, 617 - 622 () [10.1109/TED.2010.2096509] BibTeX | EndNote: XML, Text | RIS

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Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process
IEEE Electron Device Letters 32, 15 - 17 () [10.1109/LED.2010.2089423] BibTeX | EndNote: XML, Text | RIS

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Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
Journal of vacuum science & technology / B 29, 01A903 () [10.1116/1.3533760] BibTeX | EndNote: XML, Text | RIS

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Elastic strain and dopant activation in ion implanted strained Si nanowires
Journal of applied physics 108, 124908 () [10.1063/1.3520665] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Strain tensors in layer systems by precision ion channeling measurements
Journal of applied physics 107, 124906 () [10.1063/1.3415530] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts
Nanotechnology 21, 105701 () [10.1088/0957-4484/21/10/105701] BibTeX | EndNote: XML, Text | RIS

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Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI
IEEE Electron Device Letters 31, 537 - 539 () [10.1109/LED.2010.2045220] BibTeX | EndNote: XML, Text | RIS

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Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon
IEEE Electron Device Letters 31, 350 - 352 () [10.1109/LED.2010.2041028] BibTeX | EndNote: XML, Text | RIS

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Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation
Journal of applied physics 107, 044510-6 () [10.1063/1.3284089] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Datensatz erzeugt am 2012-11-17, letzte Änderung am 2023-02-27
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