Datensatz #148024 - JuSER

Gast :: Anmelden JuSER
		Suchen		Absenden		Personalisieren Ihre Benachrichtigungen Ihre Körbe Ihre Suchanfragen		Hilfe

Hauptseite > Normsätze > Projekte > Datensatz #148024

E2SWITCH

Energy Efficient Tunnel FET Switches and Circuits

Coordinator	Swiss Federal Institute of Technology in Zurich ; SCIPROM SARL ; Consorzio Nazionale Interuniversitario Per La Nanoelettronica ; École Polytechnique Fédérale de Lausanne ; CAMBRIDGE CMOS SENSORS LIMITED ; Lunds universitet ; Forschungszentrum Jülich ; IBM Research GmbH ; INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
Grant period	2013-11-01 - 2017-10-31
Funding body	European Union
Call number	FP7-ICT-2013-11
Grant number	619509
Identifier	G:(EU-Grant)619509

European Comission

OpenAIRE Explore

Recent Publications

All known publications ...
Download: BibTeX | EndNote XML, Text | RIS |

Journal Article Luong, G. V.FZJ* ; Strangio, S. ; Tiedemann, A.FZJ* ; Bernardy, P.FZJ* ; Trellenkamp, S.FZJ* ; Palestri, P. ; Mantl, S.FZJ* ; Zhao, Q. T. (Corresponding author)FZJ*
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations
IEEE journal of the Electron Devices Society 6, 1033 - 1040 (2018) [10.1109/JEDS.2018.2825639]2018 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Conference Presentation (After Call) Glass, S. (Corresponding author)FZJ* ; von den Driesch, N.FZJ* ; Strangio, S. ; Schulte-Braucks, C.FZJ* ; Rieger, T.FZJ* ; Buca, D. M.FZJ* ; Mantl, S.FZJ* ; Zhao, Q.-T.FZJ*
Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing
20172017 International Conference on Solid State Devices and Materials, SSDM, SendaiSendai, Japan, 19 Sep 2017 - 22 Sep 20172017-09-192017-09-22 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Schulte-Braucks, C. (Corresponding author)FZJ* ; Hofmann, E.FZJ* ; Glass, S.FZJ* ; von den Driesch, N.FZJ* ; Mussler, G.FZJ* ; Breuer, U.FZJ* ; Hartmann, J.-M. ; Zaumseil, P. ; Schröder, T. ; Zhao, Q.-T.FZJ* ; Mantl, S.FZJ* ; Buca, D.FZJ*
Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts
Journal of applied physics 121(20), 205705 - (2017) [10.1063/1.4984117]2017 Embargoed OpenAccess Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Schulte-Braucks, C. (Corresponding author)FZJ* ; Narimani, K.FZJ* ; Glass, S.FZJ* ; von den Driesch, N.FZJ* ; Hartmann, J. M. ; Ikonic, Z. ; Afanas’ev, V. V. ; Zhao, Q. T.FZJ* ; Mantl, S.FZJ* ; Buca, D.FZJ*
Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks
ACS applied materials & interfaces 9(10), 9102 - 9109 (2017) [10.1021/acsami.6b15279]2017 Files BibTeX | EndNote: XML, Text | RIS

Journal Article Schulte-Braucks, C. (Corresponding author)FZJ* ; Glass, S.FZJ* ; Hofmann, E.FZJ* ; Stange, D.FZJ* ; von den Driesch, N.FZJ* ; Hartmann, J. M. ; Ikonic, Z. ; Zhao, Q. T.FZJ* ; Buca, D.FZJ* ; Mantl, S.FZJ*
Process modules for GeSn nanoelectronics with high Sn-contents
Solid state electronics 128, 54 - 59 (2017) [10.1016/j.sse.2016.10.024]2017 Files BibTeX | EndNote: XML, Text | RIS

Conference Presentation (After Call) Schulte-Braucks, C. (Corresponding author)FZJ* ; Hofmann, E.FZJ* ; Glass, S.FZJ* ; von den Driesch, N.FZJ* ; Hartmann, J. M. ; Ikonic, Z. ; Mantl, S.FZJ* ; Buca, D. M.FZJ*
Compositional trends in GeSn contacts and MOScaps for electronic application
2016JSPS Meeting, JülichJülich, Germany, 24 Nov 2016 - 26 Nov 20162016-11-242016-11-26 BibTeX | EndNote: XML, Text | RIS

Poster (After Call) Schulte-Braucks, C. (Corresponding author)FZJ* ; Pandey, R. ; Barth, M. ; von den Driesch, N.FZJ* ; Sharma, P. ; Rayner, B. ; Mantl, S.FZJ* ; Buca, D. M.FZJ* ; Datta, S.
Scaled tri-layer gate oxide for GeSn nanoelectronics
20162016 Semiconductor Interface Specialists Conference (SISC), San DiegoSan Diego, USA, 7 Dec 2016 - 10 Dec 20162016-12-072016-12-10 BibTeX | EndNote: XML, Text | RIS

Contribution to a conference proceedings Pandey, R. ; Schulte-Braucks, C.FZJ* ; Sajjad, R. N. ; Barth, M. ; Gosh, R. K. ; Grisafe, B. ; Sharma, P. ; von den Driesch, N.FZJ* ; Vohra, A. ; Rayner, B. ; Loo, R. ; Mantl, S.FZJ* ; Buca, D. M.FZJ* ; Yeh, C.-C. ; Wu, C.-H. ; Tsai, W. ; Antoniadis, D. ; Datta, S. (Corresponding author)
Performance Benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 andGe/Ge0.93Sn0.07 Hetero-junction Tunnel FETs
20162016 IEEE International Electron Devices Meeting (IEDM), San FranciscoSan Francisco, USA, 5 Dec 2016 - 7 Dec 20162016-12-052016-12-07 19.6.1-19.6.4 (2016)2016 BibTeX | EndNote: XML, Text | RIS

Journal Article Schulte-Braucks, C. (Corresponding author)FZJ* ; von den Driesch, N.FZJ* ; Glass, S.FZJ* ; Tiedemann, A.FZJ* ; Breuer, U.FZJ* ; Besmehn, A.FZJ* ; Hartmann, J.-M. ; Ikonic, Z. ; Zhao, Q.-T.FZJ* ; Mantl, S.FZJ* ; Buca, D.FZJ*
Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys
ACS applied materials & interfaces 8(20), 13133 - 13139 (2016) [10.1021/acsami.6b02425]2016 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Conference Presentation (Other) Schulte-Braucks, C. (Corresponding author)FZJ* ; Lehndorff, T.FZJ* ; Glass, S.FZJ* ; von den Driesch, N.FZJ* ; Wirths, S.FZJ* ; Hartmann, J. M. ; Ikonic, Z. ; Mantl, S.FZJ* ; Buca, D. M.FZJ*
Investigation of ternary SiGeSn MOS structures
2015Semiconductor Interface Specialist Conference, SISC 2015, ArlingtonArlington, USA, 2 Dec 2015 - 5 Dec 20152015-12-022015-12-05 BibTeX | EndNote: XML, Text | RIS

All known publications ...
Download: BibTeX | EndNote XML, Text | RIS |

Datensatz erzeugt am 2014-01-10, letzte Änderung am 2023-02-27

Ähnliche Datensätze

Dieses Dokument bewerten:

1

2

3

4

(Bisher nicht rezensiert)

Zum persönlichen Korb hinzufügen
Export als Author List with IDs BibTeX (UTF-8), EndNote XML, EndNote Text, RIS, MARC, Print MARC, MARCXML, DC,
Request correction
Submit fulltext

JuSER :: :: :: ::
Powered by v1.1.7 |
Verwaltet von

Impressum | Data Privacy Policy

Diese Seite gibt es auch in den folgenden Sprachen:
Deutsch English