Identifier | G:(DE-Juel1)FUEK67 |
All known publications ...
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Conference Presentation
Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE
China-Japan Workshop on Nitride Semiconductors and Materials Devices
Seminar, Shanghai, ChinaShanghai, China, 12 Jul 2001
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Talk (non conference) (Invited)
Formation of shallow junctions in Si-nanostructures
Ion Beam Processing of Semiconductors Workshop
Seminar, ErlangenErlangen, 10 Sep 2001
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Journal Article
Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation
Microelectronic engineering 55, 219 - 225 (2001) [10.1016/S0167-9317(00)00451-2]
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Journal Article
Study of structure and optical properties of beta-FeSi2 precipitates formed by ion-implantation of Fe+ in Si (100) and effect of co-implantation of Fe+ and Si+ in amorphous SiO2
Thin solid films 381, 194 - 201 (2001)
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Journal Article
Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties
Thin solid films 381, 202 - 208 (2001) [10.1016/S0040-6090(00)01744-2]
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Contribution to a conference proceedings/Contribution to a book
Thin film chemical sensors based on chalcogenide glasses for "electronic tongue" applications
Proceedings of the 10th International Conference on Sensors, Nürnberg. - 2001. - S. 137
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Contribution to a conference proceedings/Contribution to a book
Mobile SQUID-Meßsysteme für die Flugzeuginspektion
Supraleitung und Tieftemperatur Technik 2000. - Düsseldorf, 2001. - S. 197
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Contribution to a conference proceedings/Contribution to a book
Self-assembled epitaxial CoSi2/Si(100) nanostructures
Proceedings ICSICT. - 2001. - S. 483
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Contribution to a conference proceedings/Contribution to a book
Substrate engineering by hydrogen or helium implantation for epitaxial growth of lattice mismatched Si(1-x)Gex films on silicon
Proceedings of 2000 International Conference on Ion Implantation Technology. - 2001. - 0-7803-6462-7. - S. 326
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Journal Article
Efficient electroluminescence from rare earth doped MOS diodes
Materials science and engineering / B 81, 102 - 104 (2001) [10.1016/S0921-5107(00)00668-1]
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All known publications ...
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